.css-1xsl8rf{width:100%;display:-webkit-box;display:-webkit-flex;display:-ms-flexbox;display:flex;-webkit-align-items:center;-webkit-box-align:center;-ms-flex-align:center;align-items:center;position:relative;overflow:hidden;background:var(--alert-bg);-webkit-padding-start:var(--chakra-space-4);padding-inline-start:var(--chakra-space-4);-webkit-padding-end:var(--chakra-space-4);padding-inline-end:var(--chakra-space-4);padding-top:var(--chakra-space-1);padding-bottom:var(--chakra-space-1);--alert-fg:var(--chakra-colors-orange-600);--alert-bg:var(--chakra-colors-orange-100);font-weight:var(--chakra-fontWeights-semibold);padding-left:var(--chakra-space-4);}.chakra-ui-dark .css-1xsl8rf:not([data-theme]),[data-theme=dark] .css-1xsl8rf:not([data-theme]),.css-1xsl8rf[data-theme=dark]{--alert-fg:var(--chakra-colors-orange-200);--alert-bg:rgba(251, 211, 141, 0.16);}@media screen and (min-width: 48em){.css-1xsl8rf{padding-left:var(--chakra-space-8);}}Bitte aktivieren Sie Javascript um alle Funktionen nutzen zu können und ihre Nutzererfahrung zu verbessern.

Fabiana Rampazzo

University of Padova / IT

University of Padova

Weitere Beteiligungen

14.10.2022
09:00 – 09:15 12 Min. 3 Min.
Abstract Talk
AT 234
Hot-electron trapping and electric field redistribution in 0.15 um RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier
Characterization, Electronic devices
14.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 236
Deep levels effects and on-wafer reliability of 0.15 μm InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications
Characterization, Electronic devices