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Dr. Carlo De Santi

University of Padova / IT

University of Padova

Vortrag

10.10.2022
Poster Presentation
PP 004
Physics-based extraction of trap distribution in AlGaN/GaN HEMTs from stretched exponentials
Characterization, Electronic devices
11.10.2022
17:45 – 18:00 12 Min. 3 Min.
Abstract Talk
AT 100
Trap parameter extraction and compact modeling of non-ideal dynamic performance in AlGaN/GaN HEMTs
Characterization, Electronic devices
14.10.2022
09:00 – 09:15 12 Min. 3 Min.
Abstract Talk
AT 234
Hot-electron trapping and electric field redistribution in 0.15 um RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier
Characterization, Electronic devices

Weitere Beteiligungen

10.10.2022
Poster Presentation
PP 004
Physics-based extraction of trap distribution in AlGaN/GaN HEMTs from stretched exponentials
Characterization, Electronic devices
10.10.2022
Poster Presentation
PP 090
Probing carrier transport and recombination processes in dichromatic GaN-based LEDs – a nonequilibrium Green's function study
Novel Materials and Nanostructures, Optical devices
10.10.2022
Poster Presentation
PP 023
Modeling of TAT-related forward leakage current in InGaN/GaN SQW LEDs based on experimentally-determined defects parameters
Characterization, Optical devices
11.10.2022
17:45 – 18:00 12 Min. 3 Min.
Abstract Talk
AT 100
Trap parameter extraction and compact modeling of non-ideal dynamic performance in AlGaN/GaN HEMTs
Characterization, Electronic devices
12.10.2022
11:00 – 11:15 12 Min. 3 Min.
Abstract Talk
AT 139
Analysis of degradation mechanisms in UVC single QW LEDs through electrical, optical and spectral measurements
Characterization, Optical devices
12.10.2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 141
Reliability of commercial UV-C LEDs for disinfection purposes
Characterization, Optical devices
12.10.2022
Poster Presentation
PP 388
Modeling the EQE spectral shape of InGaN-GaN multi-quantum wells solar cells
Electronic devices, Optical devices
12.10.2022
Poster Presentation
PP 392
Effects of generation and relocation of defects during the aging process of InGaN-based multi quantum well light emitting diodes
Electronic devices, Optical devices
14.10.2022
09:00 – 09:15 12 Min. 3 Min.
Abstract Talk
AT 234
Hot-electron trapping and electric field redistribution in 0.15 um RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier
Characterization, Electronic devices
14.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 236
Deep levels effects and on-wafer reliability of 0.15 μm InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications
Characterization, Electronic devices