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Jean-Claude Jacquet

III-V Lab / FR

III-V Lab

Weitere Beteiligungen

14.10.2022
09:00 – 09:15 12 Min. 3 Min.
Abstract Talk
AT 234
Hot-electron trapping and electric field redistribution in 0.15 um RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier
Characterization, Electronic devices
14.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 236
Deep levels effects and on-wafer reliability of 0.15 μm InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications
Characterization, Electronic devices