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  • Abstract Talk
  • AT 049

Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg

Appointment

Date:
Time:
Talk time:
Discussion time:
Location / Stream:
Salon Rome

Session

Ion implantation and annealing

Topics

  • Characterization
  • Electronic devices

Authors

Dr. Kohei Shima (Tohoku University / JP), Ryo Tanaka (Fuji Electric Co., Ltd. / JP), Shinya Takashima (Fuji Electric Co., Ltd. / JP), Katsunori Ueno (Fuji Electric Co., Ltd. / JP), Masaharu Edo (Fuji Electric Co., Ltd. / JP), Kazunobu Kojima (Tohoku University / JP), Professor Akira Uedono (University of Tsukuba / JP), Shoji Ishibashi (National Institute of Advanced Industrial Science and Technology / JP), Professor Shigefusa F. Chichibu (Tohoku University / JP)

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