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Ryo Tanaka

Fuji Electric Co., Ltd. / JP

Fuji Electric Co., Ltd.

Speaker

14/10/2022
09:45 – 10:00 12 Min. 3 Min.
Abstract Talk
AT 237
Successful p-type activation of Mg-implanted GaN combined with sequential N implantation and atmospheric pressure anneal with AlN cap
Characterization, Electronic devices

Further involvements

11/10/2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 049
Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg
Characterization, Electronic devices
14/10/2022
09:45 – 10:00 12 Min. 3 Min.
Abstract Talk
AT 237
Successful p-type activation of Mg-implanted GaN combined with sequential N implantation and atmospheric pressure anneal with AlN cap
Characterization, Electronic devices