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Abstract Talk
AT 237

Successful p-type activation of Mg-implanted GaN combined with sequential N implantation and atmospheric pressure anneal with AlN cap

Appointment

Date: 14/10/2022

Time: 09:45 – 10:00

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Session

Modelling and characterization

Topics

Characterization
Electronic devices

Authors

Ryo Tanaka (Fuji Electric Co., Ltd. / JP), Shinya Takashima (Fuji Electric Co., Ltd. / JP), Katsunori Ueno (Fuji Electric Co., Ltd. / JP), Masaharu Edo (Fuji Electric Co., Ltd. / JP), Prof. Dr. Masahiro Horita (Nagoya University / JP), Professor Jun Suda (Nagoya University / JP)