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  • Abstract Talk
  • AT 237

Successful p-type activation of Mg-implanted GaN combined with sequential N implantation and atmospheric pressure anneal with AlN cap

Appointment

Date:
Time:
Talk time:
Discussion time:
Location / Stream:
Salon Rome

Session

Modelling and characterization

Topics

  • Characterization
  • Electronic devices

Authors

Ryo Tanaka (Fuji Electric Co., Ltd. / JP), Shinya Takashima (Fuji Electric Co., Ltd. / JP), Katsunori Ueno (Fuji Electric Co., Ltd. / JP), Masaharu Edo (Fuji Electric Co., Ltd. / JP), Prof. Dr. Masahiro Horita (Nagoya University / JP), Professor Jun Suda (Nagoya University / JP)

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