Session – Electronic Devices
Modelling and characterization

Programme

• 08:30 – 09:00 25 Min. 5 Min.

  • Invited Talk
  • IT 62

  Effects of variable channel doping in vertical GaN MOSFETs

  • Professor Kei May Lau (Hong Kong University of Science and Technology / HK)

   Characterization, Electronic devices
• 09:00 – 09:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 234

  Hot-electron trapping and electric field redistribution in 0.15 um RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier

  • Dr. Carlo De Santi (University of Padova / IT)

   Characterization, Electronic devices
• 09:15 – 09:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 235

  Temperature dependence of impact ionization coefficients in GaN

  • Professor Takuya Maeda (University of Tokyo / JP)

   Characterization, Electronic devices
• 09:30 – 09:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 236

  Deep levels effects and on-wafer reliability of 0.15 μm InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications

  • Dr. Zhan Gao (Università degli Studi di Padova / IT)

   Characterization, Electronic devices
• 09:45 – 10:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 237

  Successful p-type activation of Mg-implanted GaN combined with sequential N implantation and atmospheric pressure anneal with AlN cap

  • Ryo Tanaka (Fuji Electric Co., Ltd. / JP)

   Characterization, Electronic devices