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IWN 2022
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Prof. Dr. Vanya Darakchieva
NanoLund, Lund University / SE
NanoLund, Lund University
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Date
Chair
14/10/2022
08:30
–
10:00
Session
Modelling and characterization
Salon Rome
Invited Speaker
10/10/2022
20:00
–
20:30
30 Min.
0 Min.
Invited Talk
Honorary lecture for Bo Monemar
Further involvements
11/10/2022
08:45
–
09:00
12 Min.
3 Min.
Abstract Talk
AT 040
Thermal conductivity characterization of (Y, Sc)AlN alloys
Characterization
11/10/2022
Poster Presentation
PP 153
Compositionally graded channel HEMTs for improved linearity in low-noise RF amplifiers
Characterization, Growth
11/10/2022
Poster Presentation
PP 265
Multi-step temperature growth process optimization of N-polar GaN and its application to HEMT structures
Characterization, Growth
11/10/2022
Poster Presentation
PP 210
Temperature-dependent electron effective mass in bulk GaN revealed by terahertz optical Hall effect
Characterization, Electronic devices
12/10/2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 108
Mobility limitations for 2DEGs in AlGaN/GaN HEMT structures depending on the Al content in the AlGaN barrier
Characterization, Electronic devices
14/10/2022
09:00
–
09:15
12 Min.
3 Min.
Abstract Talk
AT 230
Anomalous transport properties of the two-dimensional electron gas in GaN-based high-electron-mobility transistor structures
Characterization, Novel Materials and Nanostructures
14/10/2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 229
Spectroscopic and high-resolution identification of Mg causing GaN pyramidal inversion domains limiting p-type doping
Characterization, Growth
14/10/2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 258
Understanding homoepitaxial GaN growth by hot-wall MOCVD
Characterization, Growth
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