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Prof. Dr. Vanya Darakchieva

NanoLund, Lund University / SE

NanoLund, Lund University

Vorsitz

14.10.2022
08:30 – 10:00
Session
Modelling and characterization
Salon Rome

Invited Speaker

10.10.2022
20:00 – 20:30 30 Min. 0 Min.
Invited Talk
Honorary lecture for Bo Monemar

Weitere Beteiligungen

11.10.2022
08:45 – 09:00 12 Min. 3 Min.
Abstract Talk
AT 040
Thermal conductivity characterization of (Y, Sc)AlN alloys
Characterization
11.10.2022
Poster Presentation
PP 153
Compositionally graded channel HEMTs for improved linearity in low-noise RF amplifiers
Characterization, Growth
11.10.2022
Poster Presentation
PP 265
Multi-step temperature growth process optimization of N-polar GaN and its application to HEMT structures
Characterization, Growth
11.10.2022
Poster Presentation
PP 210
Temperature-dependent electron effective mass in bulk GaN revealed by terahertz optical Hall effect
Characterization, Electronic devices
12.10.2022
09:15 – 09:30 12 Min. 3 Min.
Abstract Talk
AT 108
Mobility limitations for 2DEGs in AlGaN/GaN HEMT structures depending on the Al content in the AlGaN barrier
Characterization, Electronic devices
14.10.2022
09:00 – 09:15 12 Min. 3 Min.
Abstract Talk
AT 230
Anomalous transport properties of the two-dimensional electron gas in GaN-based high-electron-mobility transistor structures
Characterization, Novel Materials and Nanostructures
14.10.2022
09:45 – 10:00 12 Min. 3 Min.
Abstract Talk
AT 229
Spectroscopic and high-resolution identification of Mg causing GaN pyramidal inversion domains limiting p-type doping
Characterization, Growth
14.10.2022
11:00 – 11:15 12 Min. 3 Min.
Abstract Talk
AT 258
Understanding homoepitaxial GaN growth by hot-wall MOCVD
Characterization, Growth