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Abstract Talk
AT 258

Understanding homoepitaxial GaN growth by hot-wall MOCVD

Appointment

Date: 14/10/2022

Time: 11:00 – 11:15

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Salon Moskau

Session

GaN Homoepitaxial Applications

Topics

Characterization
Growth

Authors

Rosalia Delgado-Carrascon (Linköping University / SE), Dr. Steffen Richter (Linköping University / SE; NanoLund, Lund University / SE), Dr. Muhammad Nawaz (Hitachi Energy Research (HER) / SE; Center for III-Nitride Technology C3NiT-Janzén, Linköping University / SE), Prof. Dr. Plamen P. Paskov (Center for III-Nitride Technology C3NiT-Janzén, Linköping University / SE), Prof. Dr. Vanya Darakchieva (NanoLund, Lund University / SE; Linköping University / SE)