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Session

Session – Growth
GaN Homoepitaxial Applications

Appointment

Date: 14/10/2022

Time: 10:30 – 11:30

Location / Stream:

Chair

Programme

10:30 – 11:00 25 Min. 5 Min.
Invited Talk
IT 67
HVPE growth for vertical GaN p-n junction diodes with high breakdown voltages
Kazuki Ohnishi (Nagoya University / JP)
11:00 – 11:15 12 Min. 3 Min.
Abstract Talk
AT 258
Understanding homoepitaxial GaN growth by hot-wall MOCVD
Rosalia Delgado-Carrascon (Linköping University / SE)
Characterization, Growth
11:15 – 11:30 12 Min. 3 Min.
Abstract Talk
AT 259
GaN homoepitaxial growth and substrate-dependent effects for vertical power devices
Dr. Jennifer Hite (US Naval Research Laboratory / US)
Characterization, Growth