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IWN 2022
Programm
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Session
Session – Growth
GaN Homoepitaxial Applications
Termin
Datum:
14.10.2022
Zeit:
10:30
–
11:30
Ort / Stream:
Salon Moskau
Chair
Professor Izabella Grzegory
Polish Academy of Sciences / PL
Dr. Sylvia Hagedorn
Ferdinand-Braun-Institut gGmbH / DE
Programm
10:30
–
11:00
25 Min.
5 Min.
Invited Talk
IT 67
HVPE growth for vertical GaN p-n junction diodes with high breakdown voltages
Kazuki Ohnishi (Nagoya University / JP)
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 258
Understanding homoepitaxial GaN growth by hot-wall MOCVD
Rosalia Delgado-Carrascon (Linköping University / SE)
Characterization, Growth
11:15
–
11:30
12 Min.
3 Min.
Abstract Talk
AT 259
GaN homoepitaxial growth and substrate-dependent effects for vertical power devices
Dr. Jennifer Hite (US Naval Research Laboratory / US)
Characterization, Growth
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