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IWN 2022
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DE
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Dr. Sylvia Hagedorn
Ferdinand-Braun-Institut gGmbH / DE
Ferdinand-Braun-Institut gGmbH
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Date
Chair
14/10/2022
10:30
–
11:30
Session
GaN Homoepitaxial Applications
Salon Moskau
Invited Speaker
11/10/2022
08:30
–
09:00
25 Min.
5 Min.
Invited Talk
IT 16
Growth on high temperature annealed AlN/sapphire templates – challenges and opportunities
Further involvements
11/10/2022
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 121
Formation and role of voids in the recovery of sputtered AlN during high temperature annealing
Characterization, Growth
12/10/2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 120
Radiative recombination and current injection efficiencies in deep UV LEDs grown on AlN/sapphire substrates with different defect densities
Characterization, Optical devices
12/10/2022
Poster Presentation
PP 308
Silicon diffusion and n-type doping in AlN
Characterization, Growth
13/10/2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 222
UVC-LEDs grown on HTA-AlN/sapphire with low dislocation densities and highSi doping for strain management
Electronic devices, Growth
13/10/2022
11:30
–
11:45
12 Min.
3 Min.
Abstract Talk
AT 224
Growth of high-quality 1.6μm-thick Al0.63Ga0.37N on strain-engineerable AlN for low forward voltage UVC LEDs
Growth, Optical devices
14/10/2022
09:00
–
09:15
12 Min.
3 Min.
Abstract Talk
AT 238
Influence of template and p-side design on the performance of 234 nm far ultraviolet-C light emitting diodes
Optical devices
14/10/2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 241
Development of AlGaN-based far-ultraviolet-C LEDs and their applications
Characterization, Optical devices
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