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  • Abstract Talk
  • AT 224

Growth of high-quality 1.6μm-thick Al0.63Ga0.37N on strain-engineerable AlN for low forward voltage UVC LEDs

Appointment

Date:
Time:
Talk time:
Discussion time:
Location / Stream:
Salon Moskau

Session

UV LEDs

Topics

  • Growth
  • Optical devices

Authors

Professor ChiaYen Huang (National Yangming Chiaotung University / TW), Dr. Sebastian Walde (Ferdinand-Braun-Institut (FBH) / DE), WenHsuan Hsieh (National Yangming Chiaotung University / TW), Dr. ChiaLung Tsai (Industrial Technology Research Institute / TW), Dr. YiKeng Fu (Industrial Technology Research Institute / TW), Dr. Sylvia Hagedorn (Ferdinand-Braun-Institut (FBH) / DE), Professor Tien-Chang Lu (National Yangming Chiaotung University / TW), Prof. Dr. Markus Weyers (Ferdinand-Braun-Institut (FBH) / DE)

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