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Prof. Dr. Markus Weyers

Ferdinand-Braun-Institut / DE

Ferdinand-Braun-Institut

Chair

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    Session
    AlGaN Relaxation and Applications
     Salon Moskau

Further involvements

    • Poster Presentation
    • PP 017
    Dark spots around threading dislocations in GaN and AlGaN layers – size variations and impact on internal quantum efficiency
     Characterization, Optical devices
    • Poster Presentation
    • PP 129
    Vibrational fingerprints of carbon point defects in Gallium Nitride (GaN)
     Characterization
    • Poster Presentation
    • PP 215
    Advances in in-situ metrology of UV-LED structures in MOVPE
     Characterization, Growth
  • –   
    • Abstract Talk
    • AT 222
    UVC-LEDs grown on HTA-AlN/sapphire with low dislocation densities and highSi doping for strain management
     Electronic devices, Growth
  • –   
    • Abstract Talk
    • AT 224
    Growth of high-quality 1.6μm-thick Al0.63Ga0.37N on strain-engineerable AlN for low forward voltage UVC LEDs
     Growth, Optical devices
  • –   
    • Abstract Talk
    • AT 238
    Influence of template and p-side design on the performance of 234 nm far ultraviolet-C light emitting diodes
     Optical devices
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