Session – Growth
AlGaN Relaxation and Applications

Programme

• 13:45 – 14:15 25 Min. 5 Min.

  • Invited Talk
  • IT 06

  Ultra-wide Bandgap AlGaN Alloys for Diodes and Transistors

  • Dr. Andrew A. Allerman (Sandia National Laboratories / US)
• 14:15 – 14:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 015

  Growth of relaxed AlGaN on native GaN substrates

  • Dr. Seiji Mita (AdroitMaterials / US)

   Growth, Optical devices
• 14:30 – 14:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 016

  Growth and characterization of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness

  • Professor Russell Dupuis (Georgia Institute of Technology / US)

   Growth, Optical devices
• 14:45 – 15:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 017

  Crystal growth of lattice-relaxed intermediate AlN molar fraction and high quality AlGaN grown on periodically formed AlN nanopillars

  • Ryota Hasegawa (Meijo University / JP)

   Growth, Optical devices
• 15:00 – 15:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 018

  Epitaxy of high quality AlN and AlGaN layers on Si (111) by reactive pulsed sputtering

  • Florian Hörich (Otto-von-Guericke University / DE)

   Characterization, Growth