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Abstract Talk
AT 018

Epitaxy of high quality AlN and AlGaN layers on Si (111) by reactive pulsed sputtering

Appointment

Date: 10/10/2022

Time: 15:00 – 15:15

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Salon Moskau

Session

AlGaN Relaxation and Applications

Topics

Characterization
Growth

Authors