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Jürgen Bläsing

Further involvements

10/10/2022
15:00 – 15:15 12 Min. 3 Min.
Abstract Talk
AT 018
Epitaxy of high quality AlN and AlGaN layers on Si (111) by reactive pulsed sputtering
Characterization, Growth
11/10/2022
Poster Presentation
PP 233
Alternately Si and C doped GaN layers for enhanced buffer breakdown
Electronic devices, Growth
11/10/2022
Poster Presentation
PP 256
Sputtering epitaxy of transition metal nitrides and AlScN
Characterization, Growth
11/10/2022
Poster Presentation
PP 266
Growth of epitaxial GaN by reactive magnetron sputtering
Characterization, Growth
12/10/2022
Poster Presentation
PP 391
MOVPE-grown optoelectronic devices based on GaN:Mg/GaN:Ge tunnel junctions
Growth, Optical devices
13/10/2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 195
Optical properties of the AlScN ternary system
Characterization, Novel Materials and Nanostructures