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Jürgen Bläsing

Weitere Beteiligungen

10.10.2022
15:00 – 15:15 12 Min. 3 Min.
Abstract Talk
AT 018
Epitaxy of high quality AlN and AlGaN layers on Si (111) by reactive pulsed sputtering
Characterization, Growth
11.10.2022
Poster Presentation
PP 233
Alternately Si and C doped GaN layers for enhanced buffer breakdown
Electronic devices, Growth
11.10.2022
Poster Presentation
PP 256
Sputtering epitaxy of transition metal nitrides and AlScN
Characterization, Growth
11.10.2022
Poster Presentation
PP 266
Growth of epitaxial GaN by reactive magnetron sputtering
Characterization, Growth
12.10.2022
Poster Presentation
PP 391
MOVPE-grown optoelectronic devices based on GaN:Mg/GaN:Ge tunnel junctions
Growth, Optical devices
13.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 195
Optical properties of the AlScN ternary system
Characterization, Novel Materials and Nanostructures