.css-1xsl8rf{width:100%;display:-webkit-box;display:-webkit-flex;display:-ms-flexbox;display:flex;-webkit-align-items:center;-webkit-box-align:center;-ms-flex-align:center;align-items:center;position:relative;overflow:hidden;background:var(--alert-bg);-webkit-padding-start:var(--chakra-space-4);padding-inline-start:var(--chakra-space-4);-webkit-padding-end:var(--chakra-space-4);padding-inline-end:var(--chakra-space-4);padding-top:var(--chakra-space-1);padding-bottom:var(--chakra-space-1);--alert-fg:var(--chakra-colors-orange-600);--alert-bg:var(--chakra-colors-orange-100);font-weight:var(--chakra-fontWeights-semibold);padding-left:var(--chakra-space-4);}.chakra-ui-dark .css-1xsl8rf:not([data-theme]),[data-theme=dark] .css-1xsl8rf:not([data-theme]),.css-1xsl8rf[data-theme=dark]{--alert-fg:var(--chakra-colors-orange-200);--alert-bg:rgba(251, 211, 141, 0.16);}@media screen and (min-width: 48em){.css-1xsl8rf{padding-left:var(--chakra-space-8);}}Please enable Javascript to use all features and improve your user experience.

Professor Jürgen Christen

University of Magdeburg / DE

University of Magdeburg

Chair

10/10/2022
08:30 – 09:30
Social Programme
Opening Ceremony
Grand Ballroom
10/10/2022
10:45 – 11:30
Plenary Session
Lattice constant engineering for long wavelength nitride emitters
Grand Ballroom
10/10/2022
11:30 – 12:15
Plenary Session
Applicability of recent advances in material research performed in UltimateGaN
Grand Ballroom
10/10/2022
19:30 – 20:30
Plenary Session
Honorary Chairs
Room Berlin
13/10/2022
08:30 – 10:00
Session
New Functionality Optical Devices (Polariton, QD, SHG)
Room Berlin

Further involvements

10/10/2022
15:00 – 15:15 12 Min. 3 Min.
Abstract Talk
AT 018
Epitaxy of high quality AlN and AlGaN layers on Si (111) by reactive pulsed sputtering
Characterization, Growth
10/10/2022
17:00 – 17:15 12 Min. 3 Min.
Abstract Talk
AT 022
Direct probing of the internal electrical field of a pn-GaN-junction
Characterization, Electronic devices
11/10/2022
Poster Presentation
PP 256
Sputtering epitaxy of transition metal nitrides and AlScN
Characterization, Growth
11/10/2022
Poster Presentation
PP 266
Growth of epitaxial GaN by reactive magnetron sputtering
Characterization, Growth
12/10/2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 109
Direct identification of the 2DEG emission of a heterostructure field-effect transistor
Characterization, Electronic devices
12/10/2022
Poster Presentation
PP 380
GaN quantum dots in vertical resonant cavity structure
Characterization, Novel Materials and Nanostructures
13/10/2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 214
Influence of space-charge region on luminescence in a lateral GaN superjunction
Characterization, Electronic devices