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IWN 2022
Programm
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Professor Jürgen Christen
University of Magdeburg / DE
University of Magdeburg
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Datum
Vorsitz
10.10.2022
08:30
–
09:30
Social Programme
Opening Ceremony
Grand Ballroom
10.10.2022
10:45
–
11:30
Plenary Session
Lattice constant engineering for long wavelength nitride emitters
Grand Ballroom
10.10.2022
11:30
–
12:15
Plenary Session
Applicability of recent advances in material research performed in UltimateGaN
Grand Ballroom
10.10.2022
19:30
–
20:30
Plenary Session
Honorary Chairs
Room Berlin
13.10.2022
08:30
–
10:00
Session
New Functionality Optical Devices (Polariton, QD, SHG)
Room Berlin
Weitere Beteiligungen
10.10.2022
15:00
–
15:15
12 Min.
3 Min.
Abstract Talk
AT 018
Epitaxy of high quality AlN and AlGaN layers on Si (111) by reactive pulsed sputtering
Characterization, Growth
10.10.2022
17:00
–
17:15
12 Min.
3 Min.
Abstract Talk
AT 022
Direct probing of the internal electrical field of a pn-GaN-junction
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 256
Sputtering epitaxy of transition metal nitrides and AlScN
Characterization, Growth
11.10.2022
Poster Presentation
PP 266
Growth of epitaxial GaN by reactive magnetron sputtering
Characterization, Growth
12.10.2022
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 109
Direct identification of the 2DEG emission of a heterostructure field-effect transistor
Characterization, Electronic devices
12.10.2022
Poster Presentation
PP 380
GaN quantum dots in vertical resonant cavity structure
Characterization, Novel Materials and Nanostructures
13.10.2022
11:30
–
11:45
12 Min.
3 Min.
Abstract Talk
AT 214
Influence of space-charge region on luminescence in a lateral GaN superjunction
Characterization, Electronic devices
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