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IWN 2022
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DE
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Dr. Gordon Schmidt
Otto-von-Guericke-University Magdeburg / DE
Otto-von-Guericke-University Magdeburg
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Date
Speaker
13/10/2022
11:30
–
11:45
12 Min.
3 Min.
Abstract Talk
AT 214
Influence of space-charge region on luminescence in a lateral GaN superjunction
Characterization, Electronic devices
Further involvements
10/10/2022
15:00
–
15:15
12 Min.
3 Min.
Abstract Talk
AT 018
Epitaxy of high quality AlN and AlGaN layers on Si (111) by reactive pulsed sputtering
Characterization, Growth
10/10/2022
17:00
–
17:15
12 Min.
3 Min.
Abstract Talk
AT 022
Direct probing of the internal electrical field of a pn-GaN-junction
Characterization, Electronic devices
11/10/2022
Poster Presentation
PP 256
Sputtering epitaxy of transition metal nitrides and AlScN
Characterization, Growth
11/10/2022
Poster Presentation
PP 266
Growth of epitaxial GaN by reactive magnetron sputtering
Characterization, Growth
12/10/2022
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 109
Direct identification of the 2DEG emission of a heterostructure field-effect transistor
Characterization, Electronic devices
12/10/2022
Poster Presentation
PP 380
GaN quantum dots in vertical resonant cavity structure
Characterization, Novel Materials and Nanostructures
12/10/2022
Poster Presentation
PP 391
MOVPE-grown optoelectronic devices based on GaN:Mg/GaN:Ge tunnel junctions
Growth, Optical devices
13/10/2022
11:30
–
11:45
12 Min.
3 Min.
Abstract Talk
AT 214
Influence of space-charge region on luminescence in a lateral GaN superjunction
Characterization, Electronic devices
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