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Dr. Gordon Schmidt

Otto-von-Guericke-University Magdeburg / DE

Otto-von-Guericke-University Magdeburg

Redner

13.10.2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 214
Influence of space-charge region on luminescence in a lateral GaN superjunction
Electronic devices, Characterization

Weitere Beteiligungen als Autor

10.10.2022
15:00 – 15:15 12 Min. 3 Min.
Abstract Talk
AT 018
Epitaxy of high quality AlN and AlGaN layers on Si (111) by reactive pulsed sputtering
Characterization, Growth
10.10.2022
17:00 – 17:15 12 Min. 3 Min.
Abstract Talk
AT 022
Direct probing of the internal electrical field of a pn-GaN-junction
Electronic devices, Characterization
11.10.2022
Poster Presentation
PP 256
Sputtering epitaxy of transition metal nitrides and AlScN
Characterization, Growth
11.10.2022
Poster Presentation
PP 266
Growth of epitaxial GaN by reactive magnetron sputtering
Characterization, Growth
12.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 109
Direct identification of the 2DEG emission of a heterostructure field-effect transistor
Electronic devices, Characterization
12.10.2022
Poster Presentation
PP 380
GaN quantum dots in vertical resonant cavity structure
Novel Materials and Nanostructures, Characterization
12.10.2022
Poster Presentation
PP 391
MOVPE-grown optoelectronic devices based on GaN:Mg/GaN:Ge tunnel junctions
Optical devices, Growth
13.10.2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 214
Influence of space-charge region on luminescence in a lateral GaN superjunction
Electronic devices, Characterization