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Dr. Gordon Schmidt

Otto-von-Guericke-University Magdeburg / DE

Otto-von-Guericke-University Magdeburg

Vortrag

13.10.2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 214
Influence of space-charge region on luminescence in a lateral GaN superjunction
Characterization, Electronic devices

Weitere Beteiligungen

10.10.2022
15:00 – 15:15 12 Min. 3 Min.
Abstract Talk
AT 018
Epitaxy of high quality AlN and AlGaN layers on Si (111) by reactive pulsed sputtering
Characterization, Growth
10.10.2022
17:00 – 17:15 12 Min. 3 Min.
Abstract Talk
AT 022
Direct probing of the internal electrical field of a pn-GaN-junction
Characterization, Electronic devices
11.10.2022
Poster Presentation
PP 256
Sputtering epitaxy of transition metal nitrides and AlScN
Characterization, Growth
11.10.2022
Poster Presentation
PP 266
Growth of epitaxial GaN by reactive magnetron sputtering
Characterization, Growth
12.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 109
Direct identification of the 2DEG emission of a heterostructure field-effect transistor
Characterization, Electronic devices
12.10.2022
Poster Presentation
PP 380
GaN quantum dots in vertical resonant cavity structure
Characterization, Novel Materials and Nanostructures
12.10.2022
Poster Presentation
PP 391
MOVPE-grown optoelectronic devices based on GaN:Mg/GaN:Ge tunnel junctions
Growth, Optical devices
13.10.2022
11:30 – 11:45 12 Min. 3 Min.
Abstract Talk
AT 214
Influence of space-charge region on luminescence in a lateral GaN superjunction
Characterization, Electronic devices