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Abstract Talk
AT 016

Growth and characterization of high Al-mole-fraction AlGaN on patterned GaN platforms for mitigating strain-induced cracks beyond the critical layer thickness

Appointment

Date: 10/10/2022

Time: 14:30 – 14:45

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Salon Moskau

Session

AlGaN Relaxation and Applications

Topics

Growth
Optical devices

Authors

Professor Russell Dupuis (Georgia Institute of Technology / US), Dr. Theeradetch Detchprohm (Georgia Institute of Technology / US)