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IWN 2022
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DE
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Dr. Seiji Mita
AdroitMaterials / US
AdroitMaterials
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Date
Speaker
10/10/2022
14:15
–
14:30
12 Min.
3 Min.
Abstract Talk
AT 015
Growth of relaxed AlGaN on native GaN substrates
Growth, Optical devices
Further involvements
10/10/2022
14:15
–
14:30
12 Min.
3 Min.
Abstract Talk
AT 015
Growth of relaxed AlGaN on native GaN substrates
Growth, Optical devices
11/10/2022
16:00
–
16:15
12 Min.
3 Min.
Abstract Talk
AT 091
The impact of polarization field and point defects on the conduction mechanism in Mg-doped compositionally graded AlGaN
Characterization, Growth
11/10/2022
16:15
–
16:30
12 Min.
3 Min.
Abstract Talk
AT 082
Directly observing growth related defects and compositional fluctuations in facet controlled epitaxial lateral overgrowth (FACELO) lasers
Characterization, Growth
11/10/2022
Poster Presentation
PP 268
Absence of strain relaxation mechanism in thick Al
0.6
Ga
0.4
N epilayers grown on single-crystal AlN substrates
Characterization, Growth
12/10/2022
Poster Presentation
PP 356
On the DX in Al-rich AlGaN – the Ge shallow-to-deep level transition
Characterization, Growth
12/10/2022
Poster Presentation
PP 337
Surface and contact studies of GaN following ultra high pressure annealing for activation of implanted magnesium
Characterization, Electronic devices
12/10/2022
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 179
High gain, large area and solar-blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
Electronic devices, Optical devices
12/10/2022
17:15
–
17:30
12 Min.
3 Min.
Abstract Talk
AT 181
Si-doped AlN Schottky barrier diodes on bulk AlN substrates
Characterization, Electronic devices
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