Session – Growth
UV LEDs

Programme

• 10:30 – 11:00 25 Min. 5 Min.

  • Invited Talk
  • IT 59

  Challenges of epitaxial growth & industrialization of efficient UV-C LEDs

  • Professor Marc Hoffmann (ams-Osram / DE)
• 11:00 – 11:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 222

  UVC-LEDs grown on HTA-AlN/sapphire with low dislocation densities and highSi doping for strain management

  • Sarina Graupeter (Technische Universität Berlin / DE)

   Electronic devices, Growth
• 11:15 – 11:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 223

  Core-shell GaN/Al(Ga)N heterostructures – from quantum wells for UV-A to monolayers for UV-C

  • Lucie Valera (Univ. Grenoble Alpes / FR)

   Growth, Optical devices
• 11:30 – 11:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 224

  Growth of high-quality 1.6μm-thick Al0.63Ga0.37N on strain-engineerable AlN for low forward voltage UVC LEDs

  • Professor ChiaYen Huang (National Yangming Chiaotung University / TW)

   Growth, Optical devices
• 11:45 – 12:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 225

  Deep UV‑LEDs with emission around 230 nm grown on single crystal AlN substrates

  • Dr. Marcel Schilling (Institute of solid state physics / TU Berlin / DE)

   Electronic devices, Growth