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IWN 2022
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DE
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Professor Hideki Hirayama
RIKEN Cluster for Pioneering Research (CPR) / JP
RIKEN Cluster for Pioneering Research (CPR)
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Date
Chair
13/10/2022
10:30
–
12:00
Session
UV LEDs
Salon Moskau
Invited Speaker
12/10/2022
16:15
–
16:45
25 Min.
5 Min.
Invited Talk
IT 42
m-plane GaN terahertz quantum cascade lasers
Speaker
14/10/2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 239
15mW power 230nm AlGaN far-UV LED panel with improved radiation pattern
Characterization, Optical devices
Further involvements
10/10/2022
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 037
The high-temperature growth in AlN with the unaffected parasitic reaction by Jet gas stream MOVPE
Growth
11/10/2022
Poster Presentation
PP 165
Dependence of c-plane sapphire misorientation angle in high temperature AlN growth and specific step bunching at large angle
Growth
11/10/2022
Poster Presentation
PP 155
The dependence of the V/III ratio in high-temperature AlN growth with several misorientations off-angle sapphire substrates
Growth
11/10/2022
Poster Presentation
PP 197
Current injection emission by high current density over 300 kA/cm
2
from 280 nm LD structure using polarization doped p-cladding layer
Growth, Optical devices
11/10/2022
16:00
–
16:15
12 Min.
3 Min.
Abstract Talk
AT 081
High temperature stimulated emission from AlGaN UV-C multiple quantum wells
Characterization, Optical devices
11/10/2022
Poster Presentation
PP 300
Remarkable increase of injection efficiency in AlGaN Far-UV LEDs and UVB LDs using polarization doped p-layers activated by remote accepter
Growth, Optical devices
12/10/2022
Poster Presentation
PP 362
Lateral epitaxial overgrowth by mass transport in AlN with the temperature of 1700℃
Growth
12/10/2022
Poster Presentation
PP 368
Comparison of the radiative efficiency of quantum wells and quantum dots emitting in the UVB range
Characterization, Novel Materials and Nanostructures
12/10/2022
17:45
–
18:00
12 Min.
3 Min.
Abstract Talk
AT 188
Effects of Mg doping into the core layer in AlGaN deep-UV LD structures
Electronic devices, Optical devices
14/10/2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 239
15mW power 230nm AlGaN far-UV LED panel with improved radiation pattern
Characterization, Optical devices
14/10/2022
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 240
232 nm AlGaN Far-UV LED with 0.53% EQE and 3.2 mW power developed by polarization doped transparent p-contact layer
Growth, Optical devices
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