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  • Abstract Talk
  • AT 240

232 nm AlGaN Far-UV LED with 0.53% EQE and 3.2 mW power developed by polarization doped transparent p-contact layer

Appointment

Date:
Time:
Talk time:
Discussion time:
Location / Stream:
Salon Vienna

Session

230nm UV-1

Topics

  • Growth
  • Optical devices

Authors

Dr. Noritoshi Maeda (RIKEN / JP), Yukio Kashima (RIKEN / JP), Eriko Matsuura (RIKEN / JP), Yasushi Iwaisako (Nippon Tungsten Co., Ltd / JP), Professor Hideki Hirayama (RIKEN / JP)

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