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Professor Hideki Hirayama

RIKEN Cluster for Pioneering Research (CPR) / JP

RIKEN Cluster for Pioneering Research (CPR)

Vorsitz

13.10.2022
10:30 – 12:00
Session
UV LEDs
Salon Moskau

Invited Speaker

12.10.2022
16:15 – 16:45 25 Min. 5 Min.
Invited Talk
IT 42
m-plane GaN terahertz quantum cascade lasers

Redner

14.10.2022
09:15 – 09:30 12 Min. 3 Min.
Abstract Talk
AT 239
15mW power 230nm AlGaN far-UV LED panel with improved radiation pattern
Optical devices, Characterization

Weitere Beteiligungen als Autor

10.10.2022
16:45 – 17:00 12 Min. 3 Min.
Abstract Talk
AT 037
The high-temperature growth in AlN with the unaffected parasitic reaction by Jet gas stream MOVPE
Growth
11.10.2022
Poster Presentation
PP 165
Dependence of c-plane sapphire misorientation angle in high temperature AlN growth and specific step bunching at large angle
Growth
11.10.2022
Poster Presentation
PP 155
The dependence of the V/III ratio in high-temperature AlN growth with several misorientations off-angle sapphire substrates
Growth
11.10.2022
Poster Presentation
PP 197
Current injection emission by high current density over 300 kA/cm² from 280 nm LD structure using polarization doped p-cladding layer
Optical devices, Growth
11.10.2022
16:00 – 16:15 12 Min. 3 Min.
Abstract Talk
AT 081
High temperature stimulated emission from AlGaN UV-C multiple quantum wells
Optical devices, Characterization
11.10.2022
Poster Presentation
PP 300
Remarkable increase of injection efficiency in AlGaN Far-UV LEDs and UVB LDs using polarization doped p-layers activated by remote accepter
Optical devices, Growth
12.10.2022
Poster Presentation
PP 362
Lateral epitaxial overgrowth by mass transport in AlN with the temperature of 1700℃
Growth
12.10.2022
Poster Presentation
PP 368
Comparison of the radiative efficiency of quantum wells and quantum dots emitting in the UVB range
Novel Materials and Nanostructures, Characterization
12.10.2022
17:45 – 18:00 12 Min. 3 Min.
Abstract Talk
AT 188
Effects of Mg doping into the core layer in AlGaN deep-UV LD structures
Optical devices, Electronic devices
14.10.2022
09:15 – 09:30 12 Min. 3 Min.
Abstract Talk
AT 239
15mW power 230nm AlGaN far-UV LED panel with improved radiation pattern
Optical devices, Characterization
14.10.2022
09:30 – 09:45 12 Min. 3 Min.
Abstract Talk
AT 240
232 nm AlGaN Far-UV LED with 0.53% EQE and 3.2 mW power developed by polarization doped transparent p-contact layer
Optical devices, Growth