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Abstract Talk
AT 037

The high-temperature growth in AlN with the unaffected parasitic reaction by Jet gas stream MOVPE

Termin

Datum: 10.10.2022

Zeit: 16:45 – 17:00

Redezeit: 12 Min.

Diskussionszeit: 3 Min.

Ort / Stream:

Salon Moskau

Session

AlN Growth

Thema

Growth

Mitwirkende

Professor Kentaro Nagamatsu (Tokushima University / JP), Takumi Miyagawa (Tokushima University / JP), Atsushi Tomita (Tokushima University / JP), Professor Hideki Hirayama (Tokushima University / JP; RIKEN, Institute of Physical and Chemical Research / JP), Yuusuke Takashima (Tokushima University / JP), Yoshiki Naoi (Tokushima University / JP)