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IWN 2022
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Professor Kentaro Nagamatsu
Tokushima University / JP
Tokushima University
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Datum
Vortrag
10.10.2022
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 037
The high-temperature growth in AlN with the unaffected parasitic reaction by Jet gas stream MOVPE
Growth
Weitere Beteiligungen
10.10.2022
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 037
The high-temperature growth in AlN with the unaffected parasitic reaction by Jet gas stream MOVPE
Growth
11.10.2022
Poster Presentation
PP 165
Dependence of c-plane sapphire misorientation angle in high temperature AlN growth and specific step bunching at large angle
Growth
11.10.2022
Poster Presentation
PP 155
The dependence of the V/III ratio in high-temperature AlN growth with several misorientations off-angle sapphire substrates
Growth
12.10.2022
Poster Presentation
PP 362
Lateral epitaxial overgrowth by mass transport in AlN with the temperature of 1700℃
Growth
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