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IWN 2022
Programm
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Session
Session – Growth
AlN Growth
Termin
Datum:
10.10.2022
Zeit:
15:45
–
17:15
Ort / Stream:
Salon Moskau
Chair
Dr. Martin Albrecht
Leibniz-Institut für Kristallzüchtung / DE
Programm
15:45
–
16:15
25 Min.
5 Min.
Invited Talk
IT 11
Practical N-type Doping in AlN for Power Electronics
Professor Ramón Collazo (North Carolina State University / US)
16:15
–
16:30
12 Min.
3 Min.
Abstract Talk
AT 035
Impact of buffer layer on flatness and crystalline quality of N-polar AlN on sapphire substrate
Prof. Dr. Narihito Okada (Yamaguchi University / JP)
Electronic devices, Growth
16:30
–
16:45
12 Min.
3 Min.
Abstract Talk
AT 036
Control of AlN polarity on sapphire substrate and growth of AlN with both Al- and N-polarities
Prof. Dr. Narihito Okada (Yamaguchi University / JP)
Growth, Optical devices
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 037
The high-temperature growth in AlN with the unaffected parasitic reaction by Jet gas stream MOVPE
Professor Kentaro Nagamatsu (Tokushima University / JP)
Growth
17:00
–
17:15
12 Min.
3 Min.
Abstract Talk
AT 038
Optimization mechanism for nitrogen-polar AlN grown by MOVPE on sapphire
Dr. Pietro Pampili (Nagoya University / JP)
Growth, Novel Materials and Nanostructures
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