IWN 2022

International Workshop on Nitride Semiconductors 2022

Absence of strain relaxation mechanism in thick Al0.6Ga0.4N epilayers grown on single-crystal AlN substrates

Growth

Poster Presentation

Characterization

The impact of polarization field and point defects on the conduction mechanism in Mg-doped compositionally graded AlGaN

Doping

Abstract Talk

High gain, large area and solar-blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates

Electronic devices

AlN based electronic devices

Optical devices

Tracking of point defects over the full compositional range of AlGaN via photoluminescence spectroscopy

Deep levels, Defect, NRCs-1

Growth of relaxed AlGaN on native GaN substrates

AlGaN Relaxation and Applications

Performance and durability of state-of-the-art commercial deep-UV light emitting diodes

UV LEDs : degradation

Directly observing growth related defects and compositional fluctuations in facet controlled epitaxial lateral overgrowth (FACELO) lasers

AlGaN DUV emitters-2

High conductivity by DX mitigation and compensation reduction in Si and Ge implanted homoepitaxial AlN on single crystal AlN substrate

Processes for Electronic Devices

Properties of oxide reconstructions in AlN and GaN

Structural Characterization, Growth model-1

On the DX in Al-rich AlGaN – the Ge shallow-to-deep level transition

Design, growth and characterization of GaN diodes with tunable turn-on voltage and lateral polar junctions for future superjunction devices

Vertical devices II

Si-doped AlN Schottky barrier diodes on bulk AlN substrates

Surface and contact studies of GaN following ultra high pressure annealing for activation of implanted magnesium

Salon Moskau

Session

Chair

GaN is already now the material of choice for power conversion up to 650 V. Despite a similar breakdown field as SiC, GaN is not compatible for higher voltages up to 10 kV. The figures of merit predict a really strong performance with experimental results lagging. In the rump session, we will discuss what is currently limiting the performance of GaN based power electronics and how to overcome these limits. Additionally, the nitride family also offers a wider range of materials, e.g., AlGaN and AlN with even wider band gaps with breakdown fields surpassing SiC and even diamond. Theoretically these materials could be the next generation semiconductors for power electronics. We will critically discuss the actions that need to be taken to align theoretical expectations with experimental results. Panelists include experts in GaN power devices, native substrate growth and preparation, AlGaN and AlN power electronics as well as an intimate knowledge of the industry and their requirements for a successful transfer into the market.

Professor Ramón Collazo

Vorsitz

Invited Speaker

Vortrag

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