Session – Growth
Doping

Programm

• 15:30 – 16:00 25 Min. 5 Min.

  • Invited Talk
  • IT 24

  Very high n and p-type conduction in (Al)GaN including the first demonstration of AlN pn homojunction Diodes

  • Prof. Dr. William Alan Doolittle (Georgia Institute of Technology / US)
• 16:00 – 16:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 091

  The impact of polarization field and point defects on the conduction mechanism in Mg-doped compositionally graded AlGaN

  • Dr. Shashwat Rathkanthiwar (North Carolina State University / US)

   Characterization, Growth
• 16:15 – 16:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 092

  Decomposition and reaction analysis of triethylgallium for the effectivity of carbon incorporation in GaN MOVPE

  • Professor Shugo Nitta (Nagoya University / JP)

   Growth