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IWN 2022
Programm
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Session
Session – Growth
Doping
Termin
Datum:
11.10.2022
Zeit:
15:30
–
16:30
Ort / Stream:
Salon Moskau
Chair
Dr. Andrew A. Allerman
Sandia National Laboratories / US
Professor Ramón Collazo
North Carolina State University / US
Programm
15:30
–
16:00
25 Min.
5 Min.
Invited Talk
IT 24
Very high n and p-type conduction in (Al)GaN including the first demonstration of AlN pn homojunction Diodes
Prof. Dr. William Alan Doolittle (Georgia Institute of Technology / US)
16:00
–
16:15
12 Min.
3 Min.
Abstract Talk
AT 091
The impact of polarization field and point defects on the conduction mechanism in Mg-doped compositionally graded AlGaN
Dr. Shashwat Rathkanthiwar (North Carolina State University / US)
Characterization, Growth
16:15
–
16:30
12 Min.
3 Min.
Abstract Talk
AT 092
Decomposition and reaction analysis of triethylgallium for the effectivity of carbon incorporation in GaN MOVPE
Professor Shugo Nitta (Nagoya University / JP)
Growth
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