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Abstract Talk
AT 181

Si-doped AlN Schottky barrier diodes on bulk AlN substrates

Termin

Datum: 12.10.2022

Zeit: 17:15 – 17:30

Redezeit: 12 Min.

Diskussionszeit: 3 Min.

Ort / Stream:

Salon Rome

Session

AlN based electronic devices

Themen

Characterization
Electronic devices

Mitwirkende

Cristyan Quiñones-Garcia (North Carolina State University / US), Dr. Dolar Khachariya (Adroit Materials / US; North Carolina State University / US), Pegah Bagheri (North Carolina State University / US), Dr. Pramod Reddy (Adroit Materials / US), Dr. Seiji Mita (Adroit Materials / US), Ronny Kirste (Adroit Materials / US), Dr. James Tweedie (Adroit Materials / US), Professor Spyridon Pavlidis (North Carolina State University / US), Professor Erhard Kohn (North Carolina State University / US), Professor Ramón Collazo (North Carolina State University / US), Professor Zlatko Sitar (North Carolina State University / US; Adroit Materials / US)