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IWN 2022
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Session
Session – Electronic Devices
AlN based electronic devices
Termin
Datum:
12.10.2022
Zeit:
16:15
–
18:00
Ort / Stream:
Salon Rome
Chair
Professor Patrick Fay
University of Notre Dame / US
Professor Gaudenzio Menghesso
University of Padova / IT
Programm
16:15
–
16:45
25 Min.
5 Min.
Invited Talk
IT 43
Static and Dynamic Thermal Behavior of AlGaN/GaN HEMTs on AlN Heat Spreaders Transferred to Copper Heat Sink by Laser Liftoff
Prof. Dr. Asif Khan (University of South Carolina / US)
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 179
High gain, large area and solar-blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
Dr. Pramod Reddy (Adroit Materials, Inc. / US)
Electronic devices, Optical devices
17:00
–
17:15
12 Min.
3 Min.
Abstract Talk
AT 180
Realization of AlN homojunction PN diodes
Christopher M. Matthews (Georgia Institute of Technology / US)
Electronic devices, Growth
17:15
–
17:30
12 Min.
3 Min.
Abstract Talk
AT 181
Si-doped AlN Schottky barrier diodes on bulk AlN substrates
Cristyan Quiñones-Garcia (North Carolina State University / US)
Characterization, Electronic devices
17:30
–
17:45
12 Min.
3 Min.
Abstract Talk
AT 182
Fabrication of GaN/AlN resonant tunneling diodes by MOVPE
Daiki Iwata (Nagoya University / JP)
Characterization, Electronic devices
17:45
–
18:00
12 Min.
3 Min.
Abstract Talk
AT 183
Electrically tunable room temperature microwave oscillations in triple-barrier GaN/AlN resonant tunneling diodes
Dr. Jimy Encomendero (Cornell University / US)
Electronic devices, Novel Materials and Nanostructures
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