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IWN 2022
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Professor Patrick Fay
University of Notre Dame / US
University of Notre Dame
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Datum
Vorsitz
12.10.2022
16:15
–
18:00
Session
AlN based electronic devices
Salon Rome
Vortrag
11.10.2022
15:45
–
16:00
12 Min.
3 Min.
Abstract Talk
AT 086
High-frequency characterization of ferroelectric gate stacks on GaN-based HEMTs for RF switch applications
Electronic devices, Novel Materials and Nanostructures
Weitere Beteiligungen
11.10.2022
15:45
–
16:00
12 Min.
3 Min.
Abstract Talk
AT 086
High-frequency characterization of ferroelectric gate stacks on GaN-based HEMTs for RF switch applications
Electronic devices, Novel Materials and Nanostructures
11.10.2022
17:30
–
17:45
12 Min.
3 Min.
Abstract Talk
AT 093
Electric field distribution in vertical GaN diodes with partially compensated edge termination
Characterization, Electronic devices
13.10.2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 196
Promising physical phenomena in epitaxial ScxAl1-xN – enhanced dielectric and ferroelectric behavior
Growth, Novel Materials and Nanostructures
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