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IWN 2022
Programm
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Dr. Pramod Reddy
Adroit Materials, Inc. / US
Adroit Materials, Inc.
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Datum
Vorsitz
12.10.2022
08:30
–
10:00
Session
Characterization of Electronic Devices-2
Room Berlin
Vortrag
12.10.2022
15:30
–
15:45
12 Min.
3 Min.
Abstract Talk
AT 152
High conductivity by DX mitigation and compensation reduction in Si and Ge implanted homoepitaxial AlN on single crystal AlN substrate
Characterization, Growth
12.10.2022
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 179
High gain, large area and solar-blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
Electronic devices, Optical devices
Weitere Beteiligungen
10.10.2022
14:15
–
14:30
12 Min.
3 Min.
Abstract Talk
AT 015
Growth of relaxed AlGaN on native GaN substrates
Growth, Optical devices
11.10.2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 044
Properties of oxide reconstructions in AlN and GaN
Characterization, Growth
11.10.2022
16:00
–
16:15
12 Min.
3 Min.
Abstract Talk
AT 091
The impact of polarization field and point defects on the conduction mechanism in Mg-doped compositionally graded AlGaN
Characterization, Growth
12.10.2022
11:15
–
11:30
12 Min.
3 Min.
Abstract Talk
AT 140
Performance and durability of state-of-the-art commercial deep-UV light emitting diodes
Optical devices
12.10.2022
11:45
–
12:00
12 Min.
3 Min.
Abstract Talk
AT 130
Tracking of point defects over the full compositional range of AlGaN via photoluminescence spectroscopy
Characterization
12.10.2022
Poster Presentation
PP 356
On the DX in Al-rich AlGaN – the Ge shallow-to-deep level transition
Characterization, Growth
12.10.2022
Poster Presentation
PP 337
Surface and contact studies of GaN following ultra high pressure annealing for activation of implanted magnesium
Characterization, Electronic devices
12.10.2022
15:30
–
15:45
12 Min.
3 Min.
Abstract Talk
AT 152
High conductivity by DX mitigation and compensation reduction in Si and Ge implanted homoepitaxial AlN on single crystal AlN substrate
Characterization, Growth
12.10.2022
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 179
High gain, large area and solar-blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
Electronic devices, Optical devices
12.10.2022
17:15
–
17:30
12 Min.
3 Min.
Abstract Talk
AT 181
Si-doped AlN Schottky barrier diodes on bulk AlN substrates
Characterization, Electronic devices
13.10.2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 198
Design, growth and characterization of GaN diodes with tunable turn-on voltage and lateral polar junctions for future superjunction devices
Characterization, Electronic devices
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