Please enable Javascript to use all features and improve your user experience.
IWN 2022
Programme
People
Search
DE
All people
Dr. Pramod Reddy
Adroit Materials, Inc. / US
Adroit Materials, Inc.
Sort by Type
Date
Chair
12/10/2022
08:30
–
10:00
Session
Characterization of Electronic Devices-2
Room Berlin
Speaker
12/10/2022
15:30
–
15:45
12 Min.
3 Min.
Abstract Talk
AT 152
High conductivity by DX mitigation and compensation reduction in Si and Ge implanted homoepitaxial AlN on single crystal AlN substrate
Characterization, Growth
12/10/2022
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 179
High gain, large area and solar-blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
Electronic devices, Optical devices
Further involvements
10/10/2022
14:15
–
14:30
12 Min.
3 Min.
Abstract Talk
AT 015
Growth of relaxed AlGaN on native GaN substrates
Growth, Optical devices
11/10/2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 044
Properties of oxide reconstructions in AlN and GaN
Characterization, Growth
11/10/2022
16:00
–
16:15
12 Min.
3 Min.
Abstract Talk
AT 091
The impact of polarization field and point defects on the conduction mechanism in Mg-doped compositionally graded AlGaN
Characterization, Growth
12/10/2022
11:15
–
11:30
12 Min.
3 Min.
Abstract Talk
AT 140
Performance and durability of state-of-the-art commercial deep-UV light emitting diodes
Optical devices
12/10/2022
11:45
–
12:00
12 Min.
3 Min.
Abstract Talk
AT 130
Tracking of point defects over the full compositional range of AlGaN via photoluminescence spectroscopy
Characterization
12/10/2022
Poster Presentation
PP 356
On the DX in Al-rich AlGaN – the Ge shallow-to-deep level transition
Characterization, Growth
12/10/2022
Poster Presentation
PP 337
Surface and contact studies of GaN following ultra high pressure annealing for activation of implanted magnesium
Characterization, Electronic devices
12/10/2022
15:30
–
15:45
12 Min.
3 Min.
Abstract Talk
AT 152
High conductivity by DX mitigation and compensation reduction in Si and Ge implanted homoepitaxial AlN on single crystal AlN substrate
Characterization, Growth
12/10/2022
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 179
High gain, large area and solar-blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
Electronic devices, Optical devices
12/10/2022
17:15
–
17:30
12 Min.
3 Min.
Abstract Talk
AT 181
Si-doped AlN Schottky barrier diodes on bulk AlN substrates
Characterization, Electronic devices
13/10/2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 198
Design, growth and characterization of GaN diodes with tunable turn-on voltage and lateral polar junctions for future superjunction devices
Characterization, Electronic devices
© Conventus Congressmanagement & Marketing GmbH
Imprint
Privacy