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Session
Session – Characterization
Characterization of Electronic Devices-2
Appointment
Date:
12/10/2022
Time:
08:30
–
10:00
Location / Stream:
Room Berlin
Chair
Oliver Hilt
Ferdinand-Braun-Institut / DE
Dr. Pramod Reddy
Adroit Materials, Inc. / US
Programme
08:30
–
09:00
25 Min.
5 Min.
Invited Talk
IT 28
Current leakage mechanism at Schottky contacts locally formed on individual screw and mixed threading dislocations in GaN substrates
Professor Akira Sakai (Osaka University / JP)
09:00
–
09:15
12 Min.
3 Min.
Abstract Talk
AT 107
Leakage current paths in AlGaN/GaN on Si HEMT structures and their statistical relation to specific dislocation structures
Dr. Sven Besendörfer (Fraunhofer IISB / DE)
Characterization, Electronic devices
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 108
Mobility limitations for 2DEGs in AlGaN/GaN HEMT structures depending on the Al content in the AlGaN barrier
Dr. Steffen Richter (Lund University / SE)
Characterization, Electronic devices
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 109
Direct identification of the 2DEG emission of a heterostructure field-effect transistor
Prof. Dr. Frank Bertram (Experimental Physics / DE)
Characterization, Electronic devices
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 110
Reverse leakage mechanism of 900 V-class GaN vertical p-n junction diodes with and without threading dislocations
Woong Kwon (Nagoya University / JP)
Characterization, Electronic devices
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