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Abstract Talk
AT 107

Leakage current paths in AlGaN/GaN on Si HEMT structures and their statistical relation to specific dislocation structures

Appointment

Date: 12/10/2022

Time: 09:00 – 09:15

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Room Berlin

Session

Characterization of Electronic Devices-2

Topics

Characterization
Electronic devices

Authors

Dr. Sven Besendörfer (Fraunhofer IISB / DE), Dr. Joff Derluyn (Soitec BE / BE), Dr. Elke Meissner (Fraunhofer IISB / DE)