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Dr. Sven Besendörfer

Fraunhofer IISB / DE

Fraunhofer IISB

Speaker

12/10/2022
09:00 – 09:15 12 Min. 3 Min.
Abstract Talk
AT 107
Leakage current paths in AlGaN/GaN on Si HEMT structures and their statistical relation to specific dislocation structures
Characterization, Electronic devices

Further involvements

11/10/2022
Poster Presentation
PP 228
Evolution of dislocations in AlN bulk crystals of subsequent growth generations by three-dimensional X-Ray topography
Characterization, Growth
12/10/2022
09:00 – 09:15 12 Min. 3 Min.
Abstract Talk
AT 107
Leakage current paths in AlGaN/GaN on Si HEMT structures and their statistical relation to specific dislocation structures
Characterization, Electronic devices