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Dr. Sven Besendörfer

Fraunhofer IISB / DE

Fraunhofer IISB

Vortrag

12.10.2022
09:00 – 09:15 12 Min. 3 Min.
Abstract Talk
AT 107
Leakage current paths in AlGaN/GaN on Si HEMT structures and their statistical relation to specific dislocation structures
Characterization, Electronic devices

Weitere Beteiligungen

11.10.2022
Poster Presentation
PP 228
Evolution of dislocations in AlN bulk crystals of subsequent growth generations by three-dimensional X-Ray topography
Characterization, Growth
12.10.2022
09:00 – 09:15 12 Min. 3 Min.
Abstract Talk
AT 107
Leakage current paths in AlGaN/GaN on Si HEMT structures and their statistical relation to specific dislocation structures
Characterization, Electronic devices