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IWN 2022
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Dr. Steffen Richter
Lund University / SE
Lund University
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Date
Speaker
12/10/2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 108
Mobility limitations for 2DEGs in AlGaN/GaN HEMT structures depending on the Al content in the AlGaN barrier
Characterization, Electronic devices
Further involvements
11/10/2022
Poster Presentation
PP 153
Compositionally graded channel HEMTs for improved linearity in low-noise RF amplifiers
Characterization, Growth
11/10/2022
Poster Presentation
PP 265
Multi-step temperature growth process optimization of N-polar GaN and its application to HEMT structures
Characterization, Growth
11/10/2022
Poster Presentation
PP 210
Temperature-dependent electron effective mass in bulk GaN revealed by terahertz optical Hall effect
Characterization, Electronic devices
12/10/2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 108
Mobility limitations for 2DEGs in AlGaN/GaN HEMT structures depending on the Al content in the AlGaN barrier
Characterization, Electronic devices
12/10/2022
Poster Presentation
PP 316
Anisotropic transport in N-polar GaN/AlGaN/GaN HEMTs grown on off-cut SiC substrates
Characterization, Growth
14/10/2022
09:00
–
09:15
12 Min.
3 Min.
Abstract Talk
AT 230
Anomalous transport properties of the two-dimensional electron gas in GaN-based high-electron-mobility transistor structures
Characterization, Novel Materials and Nanostructures
14/10/2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 258
Understanding homoepitaxial GaN growth by hot-wall MOCVD
Characterization, Growth
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