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Dr. Steffen Richter

Lund University / SE

Lund University

Vortrag

12.10.2022
09:15 – 09:30 12 Min. 3 Min.
Abstract Talk
AT 108
Mobility limitations for 2DEGs in AlGaN/GaN HEMT structures depending on the Al content in the AlGaN barrier
Characterization, Electronic devices

Weitere Beteiligungen

11.10.2022
Poster Presentation
PP 153
Compositionally graded channel HEMTs for improved linearity in low-noise RF amplifiers
Characterization, Growth
11.10.2022
Poster Presentation
PP 265
Multi-step temperature growth process optimization of N-polar GaN and its application to HEMT structures
Characterization, Growth
11.10.2022
Poster Presentation
PP 210
Temperature-dependent electron effective mass in bulk GaN revealed by terahertz optical Hall effect
Characterization, Electronic devices
12.10.2022
09:15 – 09:30 12 Min. 3 Min.
Abstract Talk
AT 108
Mobility limitations for 2DEGs in AlGaN/GaN HEMT structures depending on the Al content in the AlGaN barrier
Characterization, Electronic devices
12.10.2022
Poster Presentation
PP 316
Anisotropic transport in N-polar GaN/AlGaN/GaN HEMTs grown on off-cut SiC substrates
Characterization, Growth
14.10.2022
09:00 – 09:15 12 Min. 3 Min.
Abstract Talk
AT 230
Anomalous transport properties of the two-dimensional electron gas in GaN-based high-electron-mobility transistor structures
Characterization, Novel Materials and Nanostructures
14.10.2022
11:00 – 11:15 12 Min. 3 Min.
Abstract Talk
AT 258
Understanding homoepitaxial GaN growth by hot-wall MOCVD
Characterization, Growth