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Abstract Talk
AT 110

Reverse leakage mechanism of 900 V-class GaN vertical p-n junction diodes with and without threading dislocations

Appointment

Date: 12/10/2022

Time: 09:45 – 10:00

Talk time: 12 Min.

Discussion time: 3 Min.

Location / Stream:

Room Berlin

Session

Characterization of Electronic Devices-2

Topics

Characterization
Electronic devices

Authors

Woong Kwon (Nagoya University / JP), Dr. Seiya Kawasaki (Nagoya University / JP), Professor Atsushi Tanaka (Institute of Materials and Systems for Sustainability / JP), Hirotaka Watanabe (Institute of Materials and Systems for Sustainability / JP), Prof. Dr. Yoshio Honda (Institute of Materials and Systems for Sustainability / JP), Hirotaka Ikeda (Mitsubishi Chemical Corporation / JP), Dr. Kenji Iso (Mitsubishi Chemical Corporation / JP; Institute of Materials and Systems for Sustainability / JP), Prof. Dr. Hiroshi Amano (Akasaki Research Center / JP)