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IWN 2022
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Prof. Dr. Hiroshi Amano
Nagoya University / JP
Nagoya University
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Further involvements
10/10/2022
Poster Presentation
PP 089
Relationship between sidewall damage and light extraction efficiency on the micro-LED
Optical devices
11/10/2022
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 053
(10-13) semi-polar InGaN/GaN LEDs – a hope to overcome Green-gap
Growth, Optical devices
11/10/2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 050
Annealing of Mg nanodot arrays on GaN for p-type ohmic contact
Electronic devices, Novel Materials and Nanostructures
11/10/2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 075
Progress of morphology roughening of GaN drift layer on GaN substrates with slight off-angle grown by MOVPE
Electronic devices, Growth
11/10/2022
11:15
–
11:30
12 Min.
3 Min.
Abstract Talk
AT 076
Laser slicing process for thinning GaN substrate and GaN on GaN devices
Electronic devices, Growth
11/10/2022
Poster Presentation
PP 110
Development of accurate small signal models for AlGaN/GaN MOS-HEMTs
Characterization, Electronic devices
11/10/2022
16:15
–
16:30
12 Min.
3 Min.
Abstract Talk
AT 092
Decomposition and reaction analysis of triethylgallium for the effectivity of carbon incorporation in GaN MOVPE
Growth
11/10/2022
Poster Presentation
PP 272
Temperature field and fluid flow in ammonothermal growth of GaN during etch-back and crystal growth for a retrograde solubility configuration
Growth
12/10/2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 110
Reverse leakage mechanism of 900 V-class GaN vertical p-n junction diodes with and without threading dislocations
Characterization, Electronic devices
12/10/2022
11:15
–
11:30
12 Min.
3 Min.
Abstract Talk
AT 135
Space charge profile and carrier transport property in dopant-free GaN-based p-n junction formed by distributed polarization doping
Characterization, Electronic devices
12/10/2022
Poster Presentation
PP 323
Real-space analysis on surface potential fluctuations of Al
2
O
3
/GaN interfaces by scanning nonlinear dielectric microscopy
Characterization, Electronic devices
12/10/2022
14:45
–
15:00
12 Min.
3 Min.
Abstract Talk
AT 149
Highly effective activation of Mg–diffused p–type GaN using MgGaN
Characterization, Electronic devices
12/10/2022
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 184
Continuous-wave lasing of AlGaN-based UVC laser diode by current injection
Characterization, Optical devices
12/10/2022
17:00
–
17:15
12 Min.
3 Min.
Abstract Talk
AT 185
Analysis on mesa stripe related defects in UVC laser diode
Characterization, Optical devices
12/10/2022
17:30
–
17:45
12 Min.
3 Min.
Abstract Talk
AT 182
Fabrication of GaN/AlN resonant tunneling diodes by MOVPE
Characterization, Electronic devices
13/10/2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 200
GaN IMPATT diode with pulsed watt-class microwave oscillation
Characterization, Electronic devices
13/10/2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 210
Stability of 2D material on the substrate – the pathway realizing Ⅲ-nitride remote epitaxy
Novel Materials and Nanostructures
14/10/2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 243
Enhanced indium incorporation in full InGaN MQWs on high indium content InGaN platelets
Growth, Optical devices
14/10/2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 231
Fabrication of BGaN neutron detectors and evaluation of the radiation detection characteristics
Growth, Novel Materials and Nanostructures
14/10/2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 254
Metal stop laser drilling for blind via holes of GaN-on-GaN devices
Characterization, Electronic devices
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