Prof. Dr. Hiroshi Amano

Further involvements

• 10/10/2022

  • Poster Presentation
  • PP 089

  Relationship between sidewall damage and light extraction efficiency on the micro-LED

   Optical devices
• 11/10/2022

  09:30 – 09:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 053

  (10-13) semi-polar InGaN/GaN LEDs – a hope to overcome Green-gap

   Growth, Optical devices
• 11/10/2022

  09:45 – 10:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 050

  Annealing of Mg nanodot arrays on GaN for p-type ohmic contact

   Electronic devices, Novel Materials and Nanostructures
• 11/10/2022

  11:00 – 11:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 075

  Progress of morphology roughening of GaN drift layer on GaN substrates with slight off-angle grown by MOVPE

   Electronic devices, Growth
• 11/10/2022

  11:15 – 11:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 076

  Laser slicing process for thinning GaN substrate and GaN on GaN devices

   Electronic devices, Growth
• 11/10/2022

  • Poster Presentation
  • PP 110

  Development of accurate small signal models for AlGaN/GaN MOS-HEMTs

   Characterization, Electronic devices
• 11/10/2022

  16:15 – 16:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 092

  Decomposition and reaction analysis of triethylgallium for the effectivity of carbon incorporation in GaN MOVPE

   Growth
• 11/10/2022

  • Poster Presentation
  • PP 272

  Temperature field and fluid flow in ammonothermal growth of GaN during etch-back and crystal growth for a retrograde solubility configuration

   Growth
• 12/10/2022

  09:45 – 10:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 110

  Reverse leakage mechanism of 900 V-class GaN vertical p-n junction diodes with and without threading dislocations

   Characterization, Electronic devices
• 12/10/2022

  11:15 – 11:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 135

  Space charge profile and carrier transport property in dopant-free GaN-based p-n junction formed by distributed polarization doping

   Characterization, Electronic devices
• 12/10/2022

  • Poster Presentation
  • PP 323

  Real-space analysis on surface potential fluctuations of Al₂O₃/GaN interfaces by scanning nonlinear dielectric microscopy

   Characterization, Electronic devices
• 12/10/2022

  14:45 – 15:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 149

  Highly effective activation of Mg–diffused p–type GaN using MgGaN

   Characterization, Electronic devices
• 12/10/2022

  16:45 – 17:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 184

  Continuous-wave lasing of AlGaN-based UVC laser diode by current injection

   Characterization, Optical devices
• 12/10/2022

  17:00 – 17:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 185

  Analysis on mesa stripe related defects in UVC laser diode

   Characterization, Optical devices
• 12/10/2022

  17:30 – 17:45 12 Min. 3 Min.

  • Abstract Talk
  • AT 182

  Fabrication of GaN/AlN resonant tunneling diodes by MOVPE

   Characterization, Electronic devices
• 13/10/2022

  09:45 – 10:00 12 Min. 3 Min.

  • Abstract Talk
  • AT 200

  GaN IMPATT diode with pulsed watt-class microwave oscillation

   Characterization, Electronic devices
• 13/10/2022

  11:00 – 11:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 210

  Stability of 2D material on the substrate – the pathway realizing Ⅲ-nitride remote epitaxy

   Novel Materials and Nanostructures
• 14/10/2022

  09:15 – 09:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 231

  Fabrication of BGaN neutron detectors and evaluation of the radiation detection characteristics

   Growth, Novel Materials and Nanostructures
• 14/10/2022

  09:15 – 09:30 12 Min. 3 Min.

  • Abstract Talk
  • AT 243

  Enhanced indium incorporation in full InGaN MQWs on high indium content InGaN platelets

   Growth, Optical devices
• 14/10/2022

  11:00 – 11:15 12 Min. 3 Min.

  • Abstract Talk
  • AT 254

  Metal stop laser drilling for blind via holes of GaN-on-GaN devices

   Characterization, Electronic devices