Alle Personen

Prof. Dr. Hiroshi Amano

Nagoya University / JP

Nagoya University

Weitere Beteiligungen

  • –
    • Poster Presentation
    • PP 089
    Relationship between sidewall damage and light extraction efficiency on the micro-LED
     Optical devices
  • –   
    • Abstract Talk
    • AT 053
    (10-13) semi-polar InGaN/GaN LEDs – a hope to overcome Green-gap
     Growth, Optical devices
  • –   
    • Abstract Talk
    • AT 050
    Annealing of Mg nanodot arrays on GaN for p-type ohmic contact
     Electronic devices, Novel Materials and Nanostructures
  • –   
    • Abstract Talk
    • AT 075
    Progress of morphology roughening of GaN drift layer on GaN substrates with slight off-angle grown by MOVPE
     Electronic devices, Growth
  • –   
    • Abstract Talk
    • AT 076
    Laser slicing process for thinning GaN substrate and GaN on GaN devices
     Electronic devices, Growth
  • –
    • Poster Presentation
    • PP 110
    Development of accurate small signal models for AlGaN/GaN MOS-HEMTs
     Characterization, Electronic devices
  • –   
    • Abstract Talk
    • AT 092
    Decomposition and reaction analysis of triethylgallium for the effectivity of carbon incorporation in GaN MOVPE
     Growth
  • –
    • Poster Presentation
    • PP 272
    Temperature field and fluid flow in ammonothermal growth of GaN during etch-back and crystal growth for a retrograde solubility configuration
     Growth
  • –   
    • Abstract Talk
    • AT 110
    Reverse leakage mechanism of 900 V-class GaN vertical p-n junction diodes with and without threading dislocations
     Characterization, Electronic devices
  • –   
    • Abstract Talk
    • AT 135
    Space charge profile and carrier transport property in dopant-free GaN-based p-n junction formed by distributed polarization doping
     Characterization, Electronic devices
  • –
    • Poster Presentation
    • PP 323
    Real-space analysis on surface potential fluctuations of Al2O3/GaN interfaces by scanning nonlinear dielectric microscopy
     Characterization, Electronic devices
  • –   
    • Abstract Talk
    • AT 149
    Highly effective activation of Mg–diffused p–type GaN using MgGaN
     Characterization, Electronic devices
  • –   
    • Abstract Talk
    • AT 184
    Continuous-wave lasing of AlGaN-based UVC laser diode by current injection
     Characterization, Optical devices
  • –   
    • Abstract Talk
    • AT 185
    Analysis on mesa stripe related defects in UVC laser diode
     Characterization, Optical devices
  • –   
    • Abstract Talk
    • AT 182
    Fabrication of GaN/AlN resonant tunneling diodes by MOVPE
     Characterization, Electronic devices
  • –   
    • Abstract Talk
    • AT 200
    GaN IMPATT diode with pulsed watt-class microwave oscillation
     Characterization, Electronic devices
  • –   
    • Abstract Talk
    • AT 210
    Stability of 2D material on the substrate – the pathway realizing Ⅲ-nitride remote epitaxy
     Novel Materials and Nanostructures
  • –   
    • Abstract Talk
    • AT 231
    Fabrication of BGaN neutron detectors and evaluation of the radiation detection characteristics
     Growth, Novel Materials and Nanostructures
  • –   
    • Abstract Talk
    • AT 243
    Enhanced indium incorporation in full InGaN MQWs on high indium content InGaN platelets
     Growth, Optical devices
  • –   
    • Abstract Talk
    • AT 254
    Metal stop laser drilling for blind via holes of GaN-on-GaN devices
     Characterization, Electronic devices
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