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IWN 2022
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Prof. Dr. Hiroshi Amano
Nagoya University / JP
Nagoya University
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Weitere Beteiligungen
10.10.2022
Poster Presentation
PP 089
Relationship between sidewall damage and light extraction efficiency on the micro-LED
Optical devices
11.10.2022
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 053
(10-13) semi-polar InGaN/GaN LEDs – a hope to overcome Green-gap
Growth, Optical devices
11.10.2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 050
Annealing of Mg nanodot arrays on GaN for p-type ohmic contact
Electronic devices, Novel Materials and Nanostructures
11.10.2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 075
Progress of morphology roughening of GaN drift layer on GaN substrates with slight off-angle grown by MOVPE
Electronic devices, Growth
11.10.2022
11:15
–
11:30
12 Min.
3 Min.
Abstract Talk
AT 076
Laser slicing process for thinning GaN substrate and GaN on GaN devices
Electronic devices, Growth
11.10.2022
Poster Presentation
PP 110
Development of accurate small signal models for AlGaN/GaN MOS-HEMTs
Characterization, Electronic devices
11.10.2022
16:15
–
16:30
12 Min.
3 Min.
Abstract Talk
AT 092
Decomposition and reaction analysis of triethylgallium for the effectivity of carbon incorporation in GaN MOVPE
Growth
11.10.2022
Poster Presentation
PP 272
Temperature field and fluid flow in ammonothermal growth of GaN during etch-back and crystal growth for a retrograde solubility configuration
Growth
12.10.2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 110
Reverse leakage mechanism of 900 V-class GaN vertical p-n junction diodes with and without threading dislocations
Characterization, Electronic devices
12.10.2022
11:15
–
11:30
12 Min.
3 Min.
Abstract Talk
AT 135
Space charge profile and carrier transport property in dopant-free GaN-based p-n junction formed by distributed polarization doping
Characterization, Electronic devices
12.10.2022
Poster Presentation
PP 323
Real-space analysis on surface potential fluctuations of Al
2
O
3
/GaN interfaces by scanning nonlinear dielectric microscopy
Characterization, Electronic devices
12.10.2022
14:45
–
15:00
12 Min.
3 Min.
Abstract Talk
AT 149
Highly effective activation of Mg–diffused p–type GaN using MgGaN
Characterization, Electronic devices
12.10.2022
16:45
–
17:00
12 Min.
3 Min.
Abstract Talk
AT 184
Continuous-wave lasing of AlGaN-based UVC laser diode by current injection
Characterization, Optical devices
12.10.2022
17:00
–
17:15
12 Min.
3 Min.
Abstract Talk
AT 185
Analysis on mesa stripe related defects in UVC laser diode
Characterization, Optical devices
12.10.2022
17:30
–
17:45
12 Min.
3 Min.
Abstract Talk
AT 182
Fabrication of GaN/AlN resonant tunneling diodes by MOVPE
Characterization, Electronic devices
13.10.2022
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 200
GaN IMPATT diode with pulsed watt-class microwave oscillation
Characterization, Electronic devices
13.10.2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 210
Stability of 2D material on the substrate – the pathway realizing Ⅲ-nitride remote epitaxy
Novel Materials and Nanostructures
14.10.2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 243
Enhanced indium incorporation in full InGaN MQWs on high indium content InGaN platelets
Growth, Optical devices
14.10.2022
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 231
Fabrication of BGaN neutron detectors and evaluation of the radiation detection characteristics
Growth, Novel Materials and Nanostructures
14.10.2022
11:00
–
11:15
12 Min.
3 Min.
Abstract Talk
AT 254
Metal stop laser drilling for blind via holes of GaN-on-GaN devices
Characterization, Electronic devices
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