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Abstract Talk
AT 243

Enhanced indium incorporation in full InGaN MQWs on high indium content InGaN platelets

Termin

Datum: 14.10.2022

Zeit: 09:15 – 09:30

Redezeit: 12 Min.

Diskussionszeit: 3 Min.

Ort / Stream:

Salon Moskau

Session

InGaN and Micro LEDs

Themen

Growth
Optical devices

Mitwirkende

Wentao Cai (Nagoya University / JP), Yuta Furusawa (Institute of Materials and Systems for Sustainability (IMaSS) / JP), Dr. Jeong-Hwan Park (Nagoya University / JP), Dr. Hea-Jeong Cheong (Institute of Materials and Systems for Sustainability (IMaSS) / JP), Professor Shugo Nitta (Institute of Materials and Systems for Sustainability (IMaSS) / JP), Prof. Dr. Yoshio Honda (Institute of Materials and Systems for Sustainability (IMaSS) / JP), Prof. Dr. Hiroshi Amano (Venture Business Laboratory (VBL) / JP)