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IWN 2022
Programm
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Session
Session – Growth
InGaN and Micro LEDs
Termin
Datum:
14.10.2022
Zeit:
08:30
–
10:00
Ort / Stream:
Salon Moskau
Chair
Professor Kazuhiro Ohkawa
King Abdullah University of Science and Technology / SA
Programm
08:30
–
09:00
25 Min.
5 Min.
Invited Talk
IT 64
Efficient red emission from high In content InGaN alloy: towards native RGB micro-displays
Dr. Amélie Dussaigne (Grenoble / FR)
09:00
–
09:15
12 Min.
3 Min.
Abstract Talk
AT 242
Self-limiting growth of highly symmetric InGaN quantum dots on uniform GaN pyramid array
Professor Yong-Hoon Cho (Korea Advanced Institute of Science and Technology (KAIST) / KR)
Growth, Optical devices
09:15
–
09:30
12 Min.
3 Min.
Abstract Talk
AT 243
Enhanced indium incorporation in full InGaN MQWs on high indium content InGaN platelets
Wentao Cai (Nagoya University / JP)
Growth, Optical devices
09:30
–
09:45
12 Min.
3 Min.
Abstract Talk
AT 244
In situ X-Ray scattering studies of the influence of plasma properties on epitaxial InN growth by plasma-enhanced atomic layer deposition
Dr. Jeffrey Woodward (U.S. Naval Research Laboratory / US)
Characterization, Growth
09:45
–
10:00
12 Min.
3 Min.
Abstract Talk
AT 245
Sputtering epitaxial growth of III-Nitrides and its application to tunneling-based multicolor cascaded LEDs
Professor Hiroshi Fujioka (The University of Tokyo / JP)
Growth, Optical devices
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